Light switched Plasma Charging Damage protection device allowing high field characterization

Author

Sommer, Sebastian P. ; Paschen, Uwe ; Figge, Martin ; Vogt, Holger

Author_Institution

Fraunhofer Inst. fur Mikroelektron. Schaltungen und Syst., Duisburg, Germany

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

181

Lastpage

184

Abstract

One of the main problems in Plasma Charging Damage (PCD) measurement is the need to reference the measured damage to a zero level. Especially when the reference device is small it can not be created damage free without a protective device parallel to the gate. Normally such a device does not allow destructive measurement involving high fields and both polarities. This paper describes a structure, which is capable of protecting a device from PCD, but at the same time allows bipolar high-field diagnostic stress after the end of the process. Its usefulness is demonstrated on a realistic PCD test structure.

Keywords

MOSFET; plasma diagnostics; radiation protection; semiconductor device measurement; semiconductor device reliability; semiconductor device testing; NMOS transistor; PMOS transistor; bipolar high-field diagnostic stress; bipolar transistor; high field characterization; light switched PCD protection device; plasma charging damage destructive measurement; realistic PCD test structure; Distortion measurement; Fuses; Plasma applications; Plasma devices; Plasma measurements; Plasma temperature; Production; Protection; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331445

Filename

5331445