Electron magnetoresistance mobility in silicon on insulator layers using Kelvin´s technique

The electron mobility in silicon-on-insulator (SOI) layers has been extracted from magnetoresistance data measured on a four-concentric-ring test structure, operating in pseudo-MOS configuration, using Kelvin´s technique. Ohmic contacts were fabricated using a thermally evaporated erbium/silver double layer. The relative magnetoresistance versus magnetic field characteristics demonstrated classic quadratic behavior allowing for straightforward extraction of magnetoresistance mobility. The technique does not require any correction to be applied due to contact resistance or geometrical effects.