DocumentCode
2361896
Title
Switching ruggedness of high-power diodes
Author
Falck, E. ; Schulze, H.-J. ; Schmidt, G. ; Niedernostheide, F.-J. ; Pfaffenlehner, M.
Author_Institution
Infineon Technol. AG, Munich
fYear
2005
fDate
11-14 Sept. 2005
Abstract
The ruggedness of high-power diodes is an important quality feature in fast-switching processes from the conducting to the blocking state. In this paper, diodes with three different types of junction terminations are analyzed in detail by numerical simulations. Furthermore, the influence of positive charges in the dielectric layer covering the junction termination, and the local reduction of the charge carrier lifetime on diode ruggedness is investigated
Keywords
carrier lifetime; numerical analysis; p-n junctions; power semiconductor diodes; power semiconductor switches; charge carrier lifetime; dielectric layer; diode ruggedness; fast-switching processes; high-power diodes; junction terminations; local reduction; positive charges; Charge carrier lifetime; Dielectrics; Doping profiles; Numerical simulation; P-n junctions; Protection; Semiconductor device doping; Semiconductor diodes; Switching loss; Voltage; Bipolar device; High-power discrete device; Reliability; Reverse recovery; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219588
Filename
1665778
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