Development of a production worthy copper CMP process

Author

Wijekoon, Kapila ; Mishra, Sourabh ; Tsai, Stan ; Puntambekar, Kumar ; Chandrachood, Madhavi ; Redeker, Fritz ; Tolles, Robert ; Sun, Bingxi ; Chen, Liang ; Pan, Tony ; Li, Ping ; Nanjangud, Savitha ; Amico, Gregory ; Hawkins, Joe ; Myers, Theodore ; Kist

Author_Institution

Div. of CMP, Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1998

fDate

23-25 Sep 1998

Firstpage

354

Lastpage

363

Abstract

A chemical mechanical polishing (CMP) process for copper damascene structures has been developed and characterized on a second generation, multiple platen polishing tool. Several formulations of experimental copper slurries containing alumina abrasive particles were evaluated for their selectivity of copper to Ta, TaN and PETEOS films. The extent of copper dishing and oxide erosion of these slurries is investigated with various process parameters such as slurry flow rate, platen speed and wafer pressure. The amount of dishing and erosion is found to be largely dependent on process parameters as well as the slurry composition. It is shown that the extent of oxide erosion and copper dishing can be significantly reduced by using a two slurry copper polish process (one slurry to polish copper and another to polish barrier layers) in conjunction with an optical end-point detection system

Keywords

abrasion; chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; surface chemistry; surface topography; Al₂O₃; CMP process; Cu; Cu selectivity; Cu-Ta; Cu-TaN; PETEOS films; SiO₂; Ta; Ta films; TaN; TaN films; alumina abrasive particles; barrier layer polish slurry; chemical mechanical polishing; copper CMP process development; copper damascene structures; copper dishing; copper polish slurry; copper slurries; multiple platen polishing tool; optical end-point detection system; oxide erosion; platen speed; process parameters; slurry composition; slurry flow rate; two slurry copper polish process; wafer pressure; Aluminum; Chemical vapor deposition; Conductivity; Copper; Delay; Electromigration; Integrated circuit interconnections; Production; Slurries; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

0-7803-4380-8

Type

conf

DOI

10.1109/ASMC.1998.731616

Filename

731616