DocumentCode
2362650
Title
High speed complementary drive of a hybrid MOSFET and IGBT power switch
Author
Kaerst, Jens Peter ; Hoffmann, Klaus F.
Author_Institution
Philips Medical Syst. DMC GmbH, Hamburg
fYear
2005
fDate
11-14 Sept. 2005
Abstract
The hybrid integration of an unipolar and a bipolar power semiconductor in parallel combines their advantages whilst avoiding their disadvantages. The drawback of this approach is an increased complexity of the gate drive. This paper proposes a simple hardware solution utilising a transductor to transmit both drive and control energy together with a slow optocoupler providing an enable signal for the respective hybrid switch. Questions regarding the choice of an optimal switching frequency are addressed
Keywords
driver circuits; field effect transistor switches; power semiconductor switches; IGBT power switch; bipolar power semiconductor; control energy; high speed complementary drive; hybrid MOSFET; optimal switching frequency; optocouplers; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power semiconductor switches; Schottky diodes; Switching circuits; Switching frequency; Switching loss; Topology; Voltage; High speed drive; IGBT; MOSFET; Parallel operation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219625
Filename
1665815
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