A +18dBm, 79–87.5GHz bandwidth power amplifier in 0.13µm SiGe-BiCMOS

Author

Zhao, Yi ; Long, John R. ; Spirito, Marco ; Akhnoukh, Atef B.

Author_Institution

Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

17

Lastpage

20

Abstract

A three-stage, 77/79GHz transformer-coupled differential power amplifier is implemented in 130nm SiGe-BiCMOS. Common-base stages maximize output voltage swing and power, while a cascode first stage enhances gain for greater power-added efficiency (PAE). A frequency-scalable, parasitic-compensated balun combines power from the output stages to the 50Ω load with <;1.2dB loss and 70×70μm² area on-chip. The measured peak small-signal gain is 27dB at 83GHz, and -3dB bandwidth is >;8GHz. Maximum output power and peak-PAE are 18dBm and 9%, respectively, at 84GHz. The 0.23mm² active area PA consumes 395mW from a 2.5V supply.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; power amplifiers; BiCMOS; PAE; SiGe; bandwidth 79 GHz to 87.5 GHz; frequency 77 GHz; frequency 79 GHz; frequency 83 GHz; frequency 84 GHz; gain 27 dB; power 395 mW; power-added efficiency; size 0.13 mum; transformer-coupled differential power amplifier; voltage 2.5 V; Circuit faults; Frequency measurement; Impedance matching; Power amplifiers; Power generation; Power measurement; Windings; Millimeter-wave; SiGe-BiCMOS; monolithic balun; multi-filament transformer; power amplifier; power combiner and splitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082740

Filename

6082740