Investigation of single quantum Hall device of resistance standard in NIM

Author

Qing Zhong ; Jinjin Li ; Jianting Zhao ; Mengke Zhao ; Xueshen Wang ; Yunfeng Lu ; Yuan Zhong

Author_Institution

Nat. Inst. of Metrol., Beijing, China

fYear

2014

fDate

24-29 Aug. 2014

Firstpage

544

Lastpage

545

Abstract

We report in CPEM 2014 our latest results of the study of single quantum Hall device for the resistance standard in National Institute of Metrology, China (NIM). Experimental results indicate quantized Hall devices with satisfied longitudinal resistance, low contact resistance, and good breakdown current are obtained. Comparison of the quantum Hall resistance to a precise transfer resistance standard is made using direct current comparator (DCC). A measurement resolution on the level of 10^-7 is obtained which is limited by the DCC resolution.

Keywords

Hall effect devices; III-V semiconductors; aluminium compounds; contact resistance; current comparators; gallium arsenide; measurement standards; quantum Hall effect; semiconductor device breakdown; two-dimensional electron gas; 2D electron gas; GaAs-AlGaAs; breakdown current; direct current comparator; longitudinal resistance; low contact resistance; quantum Hall resistance; resistance standard; single quantum Hall device; Contact resistance; Current measurement; Electric breakdown; Electrical resistance measurement; Gallium arsenide; Resistance; Standards; 2DEG; AuGeNi contact; Quantum Hall effect (QHE); ohmic contact; resistance metrology;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on

Conference_Location

Rio de Janeiro

ISSN

0589-1485

Print_ISBN

978-1-4799-5205-2

Type

conf

DOI

10.1109/CPEM.2014.6898500

Filename

6898500