• DocumentCode
    2364953
  • Title

    Modeling high-frequency noise in SiGe HBTs using delayed minority charge

  • Author

    Kumar, K. ; Chakravorty, A.

  • Author_Institution
    Dept. of Electr. Eng., IIT Madras, Chennai, India
  • fYear
    2011
  • fDate
    9-11 Oct. 2011
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    Based on delayed minority charge high frequency correlated noise in silicon germanium heterojunction bipolar transistor is modeled. Following system theory, the formulated model equations are accurately implemented in Verilog-A using four extra nodes. Results show excellent agreement with numerically simulated data. Simplified model versions are also implemented and tested. Relation between high-frequency correlated noise and non-quasi-static effect is identified through delayed minority charge.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; Verilog-A; delayed minority charge; heterojunction bipolar transistors; high frequency correlated noise; non-quasi-static effect; Hardware design languages; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Noise; Numerical models; Silicon germanium; NQS effect; PCB model; SiGe HBT; Verilog-A implementation; correlated noise; minority charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-61284-165-6
  • Type

    conf

  • DOI
    10.1109/BCTM.2011.6082777
  • Filename
    6082777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2364953