DocumentCode
2365215
Title
Spinodal decomposition range of InxGa1-xNySb1-y alloys
Author
Albarrán, Salvador F D ; Elyukhin, Vyacheslav A.
Author_Institution
Escuela Superior de Ingenieria Mecanica y Electrica-IPN, Mexico, Mexico
fYear
2005
fDate
7-9 Sept. 2005
Firstpage
412
Lastpage
415
Abstract
We have described a spinodal decomposition range of the GaSb-rich InxGa1-xNySb1-y alloys grown on GaSb [001] substrates. The transformations of the bonds and strain, coherency strain, and elastic energies were taken into account. The alloys are considered in the simple solution approximation. The strain energy is presented by the interaction parameters between the constituent compounds estimated within the framework of the valence force field model. The spinodal decomposition range of InxGa1-xNySb1-y alloys with compositions x = 0.05, 0.06, 0.07, 0.08, and 0.09, 0 ≤ y ≤ 0.01 are demonstrated up to 650 °C. It is shown that N increases dramatically the temperature of the phase separation.
Keywords
III-V semiconductors; gallium compounds; indium compounds; phase separation; spinodal decomposition; wide band gap semiconductors; III-V quaternary nitrides; InxGa1-xNySb1-y; coherency strain; elastic energy; phase separation; spinodal decomposition range; strain energy; valence force field model; Capacitive sensors; Chemicals; Cities and towns; Epitaxial layers; Gallium nitride; IEEE catalog; Lattices; Stress; Substrates; Temperature; III-V quaternary nitrides; Spinodal decomposition range;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2005 2nd International Conference on
Print_ISBN
0-7803-9230-2
Type
conf
DOI
10.1109/ICEEE.2005.1529657
Filename
1529657
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