DocumentCode
2365434
Title
An assessment of modern IGBT and anti-parallel diode behaviour in hard-switching applications
Author
Rahimo, Munaf ; Schlapbach, U. ; Kopta, Arnost ; Linder, Stefan
Author_Institution
ABB Switzerland Ltd, Lenzburg
fYear
2005
fDate
11-14 Sept. 2005
Abstract
In this paper we present a detailed assessment of modern IGBT and diode behaviour when operating in a hard-switched mode. The paper covers current and future application trends and the associated performance requirements from the latest IGBT and diode designs in terms of device and circuit interaction under different operating conditions. We cover the challenges met by both device and systems designers to provide the optimum performance, efficiency and reliability in hard-switching applications
Keywords
insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; anti-parallel diode behaviour; circuit interaction; device interaction; hard-switching applications; modern IGBT; Anodes; Circuits; Insulated gate bipolar transistors; Manufacturing; Performance loss; Power electronics; Semiconductor diodes; Silicon; Substrates; Voltage; Device Application; Device Characterisation; Freewheeling Diode; IGBT;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2005 European Conference on
Conference_Location
Dresden
Print_ISBN
90-75815-09-3
Type
conf
DOI
10.1109/EPE.2005.219773
Filename
1665963
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