Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

Author

Gerhardt, N. ; Hofmann, M. ; Handtke, K. ; Stolz, W. ; Koch, S.W. ; Hader, J. ; Moloney, J.V. ; Egorov, Yu A. ; Riechert, H.

Author_Institution

AG Werkstoffe der Mikroelektron., Ruhr-Univ. Bochum, Germany

fYear

2002

fDate

2002

Firstpage

85

Lastpage

86

Abstract

We investigate the optical gain of GaInNAs/GaAs laser structures and demonstrate that the gain critically depends on the growth conditions. This observation rises the possibility to tailor the optical properties of GaInNAs/GaAs lasers by the growth conditions or even by subsequent annealing procedures without changing the nominal material composition.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; infrared spectra; laser transitions; molecular beam epitaxial growth; semiconductor lasers; surface emitting lasers; 1.3 micron; GaInNAs-GaAs; GaInNAs/GaAs; IR spectra; MBE grown; MOCVD-grown; VCSELs; annealing procedures; growth conditions; laser structures; nominal material composition; optical gain; optical properties; semiconductor lasers; vertical cavity surface emitting lasers; Atom optics; Gain measurement; Gallium arsenide; Laser theory; Laser transitions; Optical materials; Photoluminescence; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2002. IEEE 18th International

Print_ISBN

0-7803-7598-X

Type

conf

DOI

10.1109/ISLC.2002.1041130

Filename

1041130