An improved gating technique for the synchronous rectifier MOSFETs in the forward converter topology

Author

Xi, Y. ; Jain, P.K. ; Joós, G.

Author_Institution

Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada

Volume

2

fYear

1997

fDate

25-28 May 1997

Firstpage

552

Abstract

In this paper self-driven gating techniques for the synchronous rectifiers in a forward converter topology are discussed. Conventional implementations of gatings are investigated and their drawbacks are identified. An improved gating implementation is presented, which forces longer drain to source conduction of the rectifying MOSFET, protects it from excessive negative gate-source voltage stress, and has simple circuitry. A design procedure is presented and the concept is verified experimentally

Keywords

power MOSFET; power convertors; rectifying circuits; switched mode power supplies; drain to source conduction; forward converter topology; gating technique improvement; negative gate-source voltage stress protection; self-driven gating techniques; switchmode power supplies; synchronous rectifier MOSFET; Bipolar transistors; Circuits; MOSFETs; Power transformers; Rectifiers; Schottky diodes; Stress; Switches; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 1997. Engineering Innovation: Voyage of Discovery. IEEE 1997 Canadian Conference on

Conference_Location

St. Johns, Nfld.

ISSN

0840-7789

Print_ISBN

0-7803-3716-6

Type

conf

DOI

10.1109/CCECE.1997.608284

Filename

608284