Investigation on the long term reliability of power IGBT modules

Author

Wu, Wuchen ; Held, Marcel ; Jacob, Peter ; Scacco, Paolo ; Birolini, Allesandro

Author_Institution

Reliability Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1995

fDate

23-25 May 1995

Firstpage

443

Lastpage

448

Abstract

More than forty 300 A/400 A 1200 V IGBT modules, coming from different manufactures, were studied by an intermittent operating life test (power cycling) in order to estimate the long term reliability of the modern power IGBT modules. The test results and the failure analysis results indicate that no module could pass 10⁶ power cycles and most tested modules failed in emitter bonding wire lifting from the bonding pad. Besides, recrystallization and migration in bonding pad metallization, electrothermal migration caused bonding wire breaking, and local overheat induced die burn-out failure were also observed in this study

Keywords

electromigration; failure analysis; insulated gate bipolar transistors; lead bonding; modules; power transistors; recrystallisation; semiconductor device metallisation; semiconductor device packaging; semiconductor device reliability; 1200 V; 300 A; 400 A; bonding pad metallization; bonding wire breaking; electrothermal migration; emitter bonding wire lifting; failure analysis; local overheat induced die burn-out failure; long term reliability; operating life test; power IGBT modules; power cycling; recrystallization; Circuit testing; Cooling; Electrical resistance measurement; Heating; Insulated gate bipolar transistors; Semiconductor device measurement; Temperature measurement; Temperature sensors; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515079

Filename

515079