• DocumentCode
    2366943
  • Title

    A 30 V high-speed thin-film SOI power MOSFET having tungsten polycide gate

  • Author

    Matsumoto, Satoshi ; Kim, II-Jung ; Sakai, Tatsuo ; Fukumitsu, Takao ; Yachi, Toshiaki

  • Author_Institution
    NTT Interdisciplinary Res. Labs, Tokyo, Japan
  • fYear
    1995
  • fDate
    23-25 May 1995
  • Firstpage
    466
  • Lastpage
    471
  • Abstract
    A 30 V high-speed thin-film SOI power MOSFET with a tungsten polycide gate has been fabricated with a practical size. The gate resistance is about one third that of one with a conventional poly-Si gate. The experimental device had a breakdown voltage of 34 V and a specific on-resistance of 72 mΩ·mm2
  • Keywords
    power MOSFET; silicon-on-insulator; thin film transistors; 30 V; WSi; breakdown voltage; high-speed thin-film SOI power MOSFET; specific on-resistance; tungsten polycide gate; Annealing; Fabrication; MOSFET circuits; Parasitic capacitance; Power MOSFET; Silicon; Substrates; Thin film devices; Transistors; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
  • Conference_Location
    Yokohama
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-2618-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1995.515083
  • Filename
    515083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2366943