DocumentCode
2366977
Title
Doping Cu into ZnO nanostructures
Author
Xing, G.Z. ; Tao, J.G. ; Li, G.P. ; Zhang, Z. ; Wong, L.M. ; Wang, S.J. ; Huan, C. H A ; Wu, T.
Author_Institution
Sch. of Phys. & Math. Sci., Nanyang Technol. Univ., Singapore
fYear
2008
fDate
24-27 March 2008
Firstpage
462
Lastpage
466
Abstract
Controlled doping appropriate elements into semiconductor nanostructures is of vital importance to develop novel materials and functional devices. Herein, we present three methods to synthesize Cu-doped ZnO nanostructures using a simple vapor phase transport process and adopting CuCl2, CuO or Cu as doping precursors. The corresponding morphology, structure, and chemical composition were investigated using field emission scanning electron microscope, transmission electron microscope, X-ray diffraction and X-ray photoelectron spectroscopy. We show that these three methods produce nanostructures with different morphologies and doping levels. This work paves the way for investigating the physical properties of Cu-doped ZnO nanostructures and furthermore facilitates the synthesis of other transition-metal-doped nanomaterials.
Keywords
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; chemical analysis; field emission electron microscopy; nanostructured materials; scanning electron microscopy; semiconductor doping; wide band gap semiconductors; zinc compounds; X-ray diffraction; X-ray photoelectron spectroscopy; ZnO:Cu; chemical composition; doping levels; field emission scanning electron microscopy; functional devices; physical properties; semiconductor nanostructures; transition-metal-doped nanomaterials; transmission electron microscopy; vapor phase transport process; Electron emission; Morphology; Nanostructured materials; Photoelectron microscopy; Scanning electron microscopy; Semiconductor device doping; Semiconductor materials; Semiconductor nanostructures; Transmission electron microscopy; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585528
Filename
4585528
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