• DocumentCode
    2366977
  • Title

    Doping Cu into ZnO nanostructures

  • Author

    Xing, G.Z. ; Tao, J.G. ; Li, G.P. ; Zhang, Z. ; Wong, L.M. ; Wang, S.J. ; Huan, C. H A ; Wu, T.

  • Author_Institution
    Sch. of Phys. & Math. Sci., Nanyang Technol. Univ., Singapore
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    462
  • Lastpage
    466
  • Abstract
    Controlled doping appropriate elements into semiconductor nanostructures is of vital importance to develop novel materials and functional devices. Herein, we present three methods to synthesize Cu-doped ZnO nanostructures using a simple vapor phase transport process and adopting CuCl2, CuO or Cu as doping precursors. The corresponding morphology, structure, and chemical composition were investigated using field emission scanning electron microscope, transmission electron microscope, X-ray diffraction and X-ray photoelectron spectroscopy. We show that these three methods produce nanostructures with different morphologies and doping levels. This work paves the way for investigating the physical properties of Cu-doped ZnO nanostructures and furthermore facilitates the synthesis of other transition-metal-doped nanomaterials.
  • Keywords
    II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; chemical analysis; field emission electron microscopy; nanostructured materials; scanning electron microscopy; semiconductor doping; wide band gap semiconductors; zinc compounds; X-ray diffraction; X-ray photoelectron spectroscopy; ZnO:Cu; chemical composition; doping levels; field emission scanning electron microscopy; functional devices; physical properties; semiconductor nanostructures; transition-metal-doped nanomaterials; transmission electron microscopy; vapor phase transport process; Electron emission; Morphology; Nanostructured materials; Photoelectron microscopy; Scanning electron microscopy; Semiconductor device doping; Semiconductor materials; Semiconductor nanostructures; Transmission electron microscopy; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585528
  • Filename
    4585528