A New Stored-Charge-Controlled Over-Voltage Protection Concept for Wide RBSOA in High-Voltage Trench-IEGTs

Author

Ogura, Tsuneo ; Sugiyama, Koichi ; Omura, Ichiro ; Yamaguchi, Masakazu ; Teramae, Satoshi ; Yamano, Nobuaki ; Iesaka, S.

Author_Institution

Discrete Semicond. Div., Toshiba Corp., Kawasaki

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

It is important to develop overshoot protection at turn-off transient for high-voltage IGBTs/IEGTs. The purpose of this paper is to propose a new stored-charge-controlled concept (SCC-concept) using a local lifetime reduction method with suitable p-emitter concentration to realize over-voltage self-protection without sacrificing of low saturation voltage characteristic of trench-IEGTs. A device design concept supported by device simulation is introduced. Experimental measurements indicate that an ideal voltage overshoot self-protection has been successfully developed

Keywords

high-voltage engineering; insulated gate bipolar transistors; overvoltage protection; power bipolar transistors; semiconductor device models; RBSOA; SCC-concept; high-voltage IGBT; high-voltage trench-IEGT; local lifetime reduction; over-voltage protection; over-voltage self-protection; p-emitter concentration; stored-charge-controlled concept; turn-off transient; voltage overshoot protection; Anodes; Breakdown voltage; Circuits; Inductance; Insulated gate bipolar transistors; Low voltage; Motor drives; Protection; Traction motors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666062

Filename

1666062