• DocumentCode
    2367283
  • Title

    A Complementary RF-LDMOS Architecture Compatible with 0.13 μm CMOS Technology

  • Author

    Mohapatra, N.R. ; Ruecker, H. ; Ehwald, K.E. ; Sorge, R. ; Barth, R. ; Schley, P. ; Schmidt, D. ; Wulf, H.E.

  • Author_Institution
    IHP, Frankfurt
  • fYear
    2006
  • fDate
    4-8 June 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we present a modular and reliable complementary RF LDMOS (laterally diffused MOS) architecture fully compatible with a 0.13 mum CMOS platform. We demonstrate BVDS*fT values up to 560 and 210 GHzV, respectively, for N- and PLDMOS transistors. A major advantage of the proposed process flow is that the drift region of N- and PLDMOS transistors can be independently optimized for different BVDSwithout affecting the VT
  • Keywords
    MOSFET; millimetre wave field effect transistors; semiconductor device reliability; 0.13 micron; CMOS technology; NMOS transistors; PLDMOS transistors; RF-LDMOS architecture; drift region; laterally diffused MOS architecture; BiCMOS integrated circuits; Breakdown voltage; CMOS process; CMOS technology; Frequency conversion; Immune system; Implants; MOSFETs; Radio frequency; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
  • Conference_Location
    Naples
  • Print_ISBN
    0-7803-9714-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.2006.1666065
  • Filename
    1666065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2367283