DocumentCode
2367387
Title
Boron diffusion model refinement and its effect on the calculation of reverse short channel effect
Author
Hane, Masami ; Rafferty, Conor S. ; Ikezawa, Takeo ; Matsumoto, Hiroshi
Author_Institution
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
15
Lastpage
16
Abstract
The reverse short channel effect (RSCE) of flat channel profile nMOSFET was studied by modelling the dopant diffusion process and considering its parameter dependence. It was found that the binding energy between boron (B) and interstitial silicon (I) is one of the key parameters for the quantitative description of the boron diffusion and the RSCG.
Keywords
MOSFET; boron; diffusion; doping profiles; semiconductor device models; semiconductor doping; silicon; RSCE; Si:B; binding energy; diffusion model refinement; dopant diffusion process; flat channel profile; nMOSFET; parameter dependence; reverse short channel effect; Bismuth; Boron; Diffusion processes; Laboratories; MOSFET circuits; Microelectronics; National electric code; Semiconductor process modeling; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865251
Filename
865251
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