DocumentCode
2367696
Title
Size effect in Cu nano-interconnects and its implication on electromigration
Author
Hou, Yuejin ; Tan, Cher Ming
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
2008
fDate
24-27 March 2008
Firstpage
610
Lastpage
613
Abstract
With the interconnect dimensions approaching the length of the mean free path (MFP) of the electron, size effects are becoming important. This is manifested in the increase of the resistivity for nano-interconnects. This change in the electrical properties will pose new challenges in the EM performance for Cu nano-interconnects.
Keywords
integrated circuit interconnections; nanoelectronics; Cu; EM performance; electromigration; mean free path; nanointerconnects; size effect; Conductivity; Dielectrics; Electromigration; Electrons; Grain boundaries; Integrated circuit interconnections; Material properties; Matter waves; Particle scattering; Transistors; Electromigration; Nano-interconnect; Size effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585561
Filename
4585561
Link To Document