Polarization-independent micro-ring resonator on silicon-on-insulator

Author

Geng, Minming ; Jia, Lianxi ; Zhang, Lei ; Yang, Lin ; Liu, Yuliang ; Li, Fang

Author_Institution

Optoelectron. Syst. Lab., Chinese Acad. of Sci., Beijing

fYear

2008

fDate

24-27 March 2008

Firstpage

624

Lastpage

626

Abstract

Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.

Keywords

cavity resonators; finite difference time-domain analysis; microcavities; micromechanical resonators; optical waveguide components; optical waveguides; silicon-on-insulator; finite difference time-domain method; photonic wire waveguide; polarization-independent micro-ring resonator; polarization-insensitive PWW structure; quasi-TE mode; quasi-TM mode; silicon-on-insulator; Nanoelectronics; Polarization; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585563

Filename

4585563