Numerical simulation of ballistic Carbon Nanotube Field-Effect Transistors

In this paper we consider a Carbon Nanotube Field Effect Transistor with coaxial symmetry terminated with metallic contacts on both sides and surrounded with a metallic gate. We calculate band structure of carbon nanotube using the fight-binding approximation and extract useful parameters such as energy bandgap and effective mass from it. We solve the system of coupled Schdodinger-Poisson equations to obtain the wave function of carriers in the channel by using appropriate normalization of wave function. We also investigate the current-voltage characteristics of the device.