DocumentCode
2368194
Title
Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology
Author
Vershinin, K. ; Sweet, M. ; Ngwendson, L. ; Thomson, Jim ; Waind, P. ; Bruce, J. ; Narayanan, Sankara E M
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
fYear
2006
fDate
4-8 June 2006
Firstpage
1
Lastpage
4
Abstract
For the first time, we present experimental results of a trench clustered IGBT structures fabricated in 1.2kV non-punch-through technology. Experimental results demonstrate significantly low forward voltage drop in comparison to trench IGBTs in the same technology. Furthermore, results show that the use of dummy cells in the TCIGBT device can improve the trade-off between the on-state and turn-off losses
Keywords
insulated gate bipolar transistors; 1.2 kV; TCIGBT device; dummy cells; low forward voltage drop; non punch through technology; on-state losses; trench clustered IGBT structures; trench clustered insulated gate bipolar transistor; turn-off losses; Cathodes; Fabrication; Insulated gate bipolar transistors; Insulation; Low voltage; MOSFETs; Packaging; Silicon on insulator technology; Textile industry; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location
Naples
Print_ISBN
0-7803-9714-2
Type
conf
DOI
10.1109/ISPSD.2006.1666102
Filename
1666102
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