DocumentCode
2368288
Title
Thermal stability issues in copper based metallization
Author
Li, Jian ; Shacham-Diamond, Y. ; Mayer, J.W. ; Colgan, E.G.
Author_Institution
Cornell Univ., Ithaca, NY, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
153
Lastpage
159
Abstract
The thermally induced reactions in Cu/Si, Cu/metal, Cu/silicide and Cu/dielectric films have been studied by both Rutherford backscattering and Auger electron spectroscopy. Diffusion barrier layers (TiN, TiW, Ta, Cr and Co) have been tested in the Cu based metallization regime. Alloying Cu with other elements (Pd, Ti, Cr and Al) can significantly prevent Cu from oxidation. Methods to produce Cu thin films (e.g. electroless Cu) have been summarized
Keywords
Auger effect; Rutherford backscattering; copper; copper alloys; integrated circuit technology; metallisation; stability; Auger electron spectroscopy; Co; Cr; Cu alloys; Cu thin films; Cu-Si; Cu/dielectric films; Cu/silicide films; Rutherford backscattering; Ta; TiN; TiW; diffusion barrier layers; electroless Cu; thermally induced reactions; thermally stability; Backscatter; Chromium; Copper; Dielectric films; Electrochemical impedance spectroscopy; Electrons; Metallization; Silicides; Thermal stability; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.152979
Filename
152979
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