Improved Dielectric Isolation HVIC Technology (SODI) in Transfer Mold Package

Author

Akiyama, H. ; Yasuda, Norihito ; Moritani, J. ; Takanashi, K. ; Majumdar, G.

Author_Institution

Power Device Div., Mitsubishi Electr. Corp., Fukuoka

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

Silicon on double insulator (SODI) is a novel and promising technology in order to develop higher breakdown voltage and to reduce cost of dielectric isolation HVIC. First work of SODI is published in 2004, and some improvements have been continued. As a result, a new path has opened that it would be possible to apply the transfer mold package assembly process to SODI with keeping its high breakdown voltage (>800V) easily. By these improvements, we hope that the SODI technology can contribute to general purpose motor-drive technology in the application of intelligent power modules (IPMs). The details of the technical improvements and a pre-driver SODI-HVIC trial fabrication results are reported in this paper

Keywords

assembling; electric breakdown; integrated circuit packaging; isolation technology; power integrated circuits; silicon-on-insulator; transfer moulding; SODI technology; breakdown voltage; dielectric isolation HVIC technology; intelligent power modules; motor-drive technology; silicon on double insulator technology; transfer mold package assembly process; Assembly; Breakdown voltage; Controllability; Dielectric devices; Dielectric substrates; Insulated gate bipolar transistors; Isolation technology; Packaging; Research and development; Shape control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666107

Filename

1666107