Interaction analysis and insulation techniques for short-circuit integrated protection structure

One of the steps of the power components reliability improvement is to integrate protection structures (Robb, 1994 and Yeki, 1994). An integrated structure which protect IGBT against short-circuit conditions has already been studied. This structure has been studied and improved for its integration in a classical IGBT technological process (Caramel, 2006). Generally, the integration of protection structures and power devices on the same substrate leads to insulation problems. In order to overcome these problems for our application, we propose in these paper three insulation techniques compatible with a classical IGBT technological process. [2D] numerical simulations have been thus performed in order to highlight the necessity of insulation and for compare the insulation techniques efficiency