Investigations of all lead free IGBT module structure with low thermal resistance and high reliability

Author

Nishimura, Y. ; Morozumi, A. ; Mochizuki, E. ; Takahashi, Y.

Author_Institution

Fuji Electr. Device Technol. Co., Ltd., Nagano

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

This paper presents all lead free IGBT module structure with low thermal resistance and high reliability. Using thick copper foil alumina DCB, Sn/Ag/In solder, and copper base, we have achieved low thermal resistance as same as the current aluminum nitride (AlN) IGBT module structure. In addition to low thermal resistance, this new structure shows excellent temperature cycling capability of 3000 cycles

Keywords

III-V semiconductors; aluminium compounds; indium alloys; insulated gate bipolar transistors; semiconductor device reliability; silver alloys; solders; thermal resistance; tin alloys; wide band gap semiconductors; AlN; IGBT module structure; SnAgIn; alumina DCB; aluminum nitride; lead free module; thermal resistance; thick copper foil; Ceramics; Copper; Costs; Electric resistance; Environmentally friendly manufacturing techniques; Insulated gate bipolar transistors; Insulation; Lead; Thermal conductivity; Thermal resistance; IGBT module stractuere lead free solder; high reliability; low thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666118

Filename

1666118