MuGFET carrier mobility and velocity: Impacts of fin aspect ratio, orientation and stress

A detailed study of the impacts of fin aspect ratio and crystalline orientation and process-induced channel stress on the performance of multi-gate transistors is presented. It is found that CESL-induced stress provides for the greatest enhancement in effective carrier mobility and ballistic velocity, for n- and p-channel FinFETs and Tri-Gate FETs. Extracted carrier velocity values in short-channel FinFETs still depend largely on carrier mobility.