• DocumentCode
    2368793
  • Title

    20m Ω cm2660V Super Junction MOSFETs Fabricated by Deep Trench Etching and Epitaxial Growth

  • Author

    Takahashi, K. ; Kuribayashi, H. ; Kawashima, T. ; Wakimoto, S. ; Mochizuki, K. ; Nakazawa, H.

  • Author_Institution
    Fuji Electr. Adv. Technol. Co., Ltd., Nagano
  • fYear
    2006
  • fDate
    4-8 June 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    600V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth method are numerically and experimentally investigated. By applying a p-type ion implantation to its termination region, a breakdown voltage (VB) of the fabricated SJ-MOSFETs successfully increased by 150V. The fabricated SJ-MOSFET shows an extremely small specific on-resistance (RonA) of 19.8mOmegacm2 at the breakdown voltage of 658V. This characteristic is lower than any other reported trench-filling type devices in the same voltage class
  • Keywords
    epitaxial growth; etching; ion implantation; power MOSFET; semiconductor junctions; 150 V; 658 V; 660 V; breakdown voltage; deep trench etching; epitaxial growth; p-type ion implantation; super junction MOSFET; trench-filling type devices; Breakdown voltage; Capacitance; Epitaxial growth; Etching; Impurities; Leakage current; MOSFETs; Microscopy; Oxidation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
  • Conference_Location
    Naples
  • Print_ISBN
    0-7803-9714-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.2006.1666130
  • Filename
    1666130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368793