• DocumentCode
    2368814
  • Title

    Electrical and Physical Characterization of 150-200V FLYMOSFETs

  • Author

    Roig, J. ; Weber, Y. ; Reynès, J.M. ; Morancho, F. ; Stefanov, E.N. ; Dilhan, M. ; Sarrabayrouse, G.

  • Author_Institution
    LAAS/CNRS, Toulouse Cedex
  • fYear
    2006
  • fDate
    4-8 June 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A vertical n-channel 150V-200V FLYMOSFET is proposed in this work for the first time. Initially, spreading resistance profiling, scanning capacitance microscopy and process simulation are used to provide an accurate 1D and 2D device physical characterization. Concerning the electrical study, FLYMOSFET measurements show superior RonS-BVdss trade-off in comparison with the conventional power MOSFET and improved UIS ruggedness in front of the super junction MOSFET
  • Keywords
    power MOSFET; scanning probe microscopy; semiconductor device measurement; semiconductor device models; semiconductor junctions; 150 to 200 V; UIS ruggedness; device physical characterization; n-channel FLYMOSFET; process simulation; scanning capacitance microscopy; spreading resistance profiling; super junction MOSFET; vertical FLYMOSFET; Capacitance; Electric resistance; Immune system; MOSFET circuits; Microscopy; Neodymium; Power MOSFET; Shape; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
  • Conference_Location
    Naples
  • Print_ISBN
    0-7803-9714-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.2006.1666131
  • Filename
    1666131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368814