Reliable submicron vias using aluminum alloy high temperature sputter filling

Author

Nishimura, Hiroshi ; Yamada, Tatsuya ; Ogawa, Shin-ichi

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1991

fDate

11-12 Jun 1991

Firstpage

170

Lastpage

176

Abstract

The authors have developed a reliable submicron via formation technology using Al-Si-Cu high temperature sputter filling with a thin Ti underlayer. Complete filling of a 0.5 μm diameter via hole with an aspect ratio of 1.6 was achieved. Crystallinity of the aluminum in the via was single crystalline [111] textured normal to a substrate. The via chain resistance was found to depend on Ti underlayer thickness. The electromigration lifetime of the sputter filled via chain is found to be a factor of about 20 greater than that for a conventional one

Keywords

VLSI; aluminium alloys; copper alloys; electromigration; integrated circuit technology; metallisation; reliability; silicon alloys; sputtered coatings; titanium; 0.5 micron; Al-Si-Cu alloy; Ti underlayer thickness; VLSI; aspect ratio; electromigration lifetime; high temperature sputter filling; reliability; reliable vias; single crystal via filling; submicron via formation technology; thin Ti underlayer; via chain resistance; Aluminum alloys; Crystallization; Electromigration; Filling; Metallization; Passivation; Plasma temperature; Silicon; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.152982

Filename

152982