• DocumentCode
    2369229
  • Title

    Fabrication of CNT interconnect structures and active devices using laser beam manipulation and deposition

  • Author

    Nai, M.H. ; Wang, S.Z. ; Moo, A.M. ; Vinciguerra, V. ; Kasim, J. ; Shen, Z.X.

  • Author_Institution
    STMicroelectronics Asia Pacific Pte Ltd., Singapore
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    937
  • Lastpage
    940
  • Abstract
    A maskless and non-invasive technique based on optical trapping is used for the direct writing of CNT patterns on Si wafers. Interconnections and active transistor devices are fabricated at room temperatures using this technique.
  • Keywords
    carbon nanotubes; elemental semiconductors; integrated circuit interconnections; laser deposition; radiation pressure; silicon; CNT interconnect structures fabrication; Si; carbon nanotube interconnections; direct writing; laser beam deposition; laser beam manipulation; maskless technique; noninvasive technique; optical trapping; silicon wafers; Laser beams; Nanoelectronics; Optical device fabrication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585638
  • Filename
    4585638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2369229