• DocumentCode
    2369904
  • Title

    Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

  • Author

    Chen, W.B. ; Shie, B.S. ; Chin, Albert ; Hsu, K.C. ; Chi, C.C.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (Rs), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm2/Vs high-field (1 MV/cm) mobility and low 37 mV ΔVt PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n+/p junction and 10X better ION/IOFF.
  • Keywords
    MOSFET; high-k dielectric thin films; laser beam annealing; p-n junctions; EOT; gate capacitance; high-κ/Ge n-MOSFET; higher κ metal-gate; laser annealing; n+/p junction; size 0.95 nm;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703385
  • Filename
    5703385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2369904