A 6-10-GHz CMOS Power Amplifier with an Inter-stage Wideband Impedance Transformer For UWB Transmitters

Author

Chung, H.-W. ; Hsu, C.-Y. ; Yang, C.-Y. ; Wei, K.-F. ; Chuang, H.-R.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

305

Lastpage

308

Abstract

A 6-10-GHz broadband CMOS power amplifier (PA) for Ultra-wideband (UWB) transmitters is presented. An inter-stage wideband impedance transformer is designed between the small-signal stage and driver amplifier for the wideband operation. The UWB PA is implemented in the 0.18-mum 1P6M standard UMC CMOS process. Fully on-wafer measurement shows that the fabricated PA exhibits an average small-signal gain, P_1dB, and PAE of 8.5 dB, 5 dBm, and 14.4%, respectively, from 6 to 10 GHz. A low power consumption of only 18 mW is obtained from a voltage of 1.5 V.

Keywords

CMOS integrated circuits; MMIC power amplifiers; impedance convertors; radio transmitters; ultra wideband communication; wideband amplifiers; 1P6M standard UMC CMOS process; CMOS power amplifier; UWB; driver amplifier; frequency 6 GHz to 10 GHz; interstage wideband impedance transformer; on-wafer measurement; power 18 mW; size 0.18 mum; ultrawideband transmitters; voltage 1.5 V; Broadband amplifiers; CMOS process; Driver circuits; Energy consumption; Gain measurement; Impedance; Operational amplifiers; Power amplifiers; Transmitters; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751449

Filename

4751449