Physical analysis of electromigration damage under bidirectional (BC) and pulsed DC (PDC) conditions

Author

Castano, E. ; Maiz, J.

Author_Institution

CEIT, San Sebastian, Spain

fYear

1991

fDate

11-12 Jun 1991

Firstpage

258

Lastpage

264

Abstract

Physical failure analysis has been performed on Al-Si metal interconnects stressed for electromigration under bidirectional (BC) and pulsed unidirectional (PDC) currents. Electrically measured resistance changes due to void formation have been compared in estimates obtained from direct void observation under the SEM and a correlation between them has been established. The results provide support to the average current model proposed for EM by J.A. Maiz (1989). The influence of microstructural and geometrical parameters in EM void generation has also been studied and it has been concluded that the type and location of the PDC and BC Em generated voids are similar to that observed under DC conditions

Keywords

VLSI; aluminium alloys; electromigration; metallisation; reliability; silicon alloys; Al-Si metal interconnects; average current model; bidirectional current conditions; direct void observation; electromigration damage; geometrical parameters; measured resistance changes; pulsed DC conditions; void formation; Circuit testing; DC generators; Electric resistance; Electrical resistance measurement; Electromigration; Immune system; Integrated circuit interconnections; Pulse measurements; Stress measurement; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.152997

Filename

152997