DocumentCode
2372392
Title
High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz
Author
Kuroda, Kenta ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution
Univ. of Electro-Commun., Chofu
fYear
2008
fDate
27-31 Oct. 2008
Firstpage
440
Lastpage
443
Abstract
We report on the design, fabrication, and measurement results of a high-efficiency class-F amplifier using an AlGaN/GaN HEMT at 5.7 GHz. Because of their higher operating voltage, GaN devices are expected to have higher operating efficiency as compared to GaAs devices. The fabricated amplifier using a low-loss resin microstrip substrate validated high efficiency expectations with a maximum drain efficiency of 77.1%, maximum power added efficiency of 68.7%, and output power of up to 34.5 dBm at 5.69 GHz.
Keywords
HF amplifiers; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; GaN-HEMT class-F amplifier; frequency 5.7 GHz; low-loss resin microstrip substrate; maximum drain efficiency; Aluminum gallium nitride; Fabrication; Gallium arsenide; Gallium nitride; HEMTs; High power amplifiers; Microstrip; Power generation; Resins; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-006-4
Type
conf
DOI
10.1109/EUMC.2008.4751483
Filename
4751483
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