• DocumentCode
    2373035
  • Title

    Modeling of SEU from individual nuclear particles

  • Author

    Loginov, Victor V.

  • Author_Institution
    Moscow Inst. of Electron. Eng., Moscow
  • fYear
    2008
  • fDate
    1-5 July 2008
  • Firstpage
    34
  • Lastpage
    36
  • Abstract
    Problems of modeling of the SOS and SOI MOSFETs that are working in irradiation conditions was analyzed in this work. Case of SEU was modeled.
  • Keywords
    MOSFET; radiation effects; semiconductor device models; silicon-on-insulator; SOI MOSFETs; SOS MOSFETs; irradiation; nuclear particles; single-event upsets; Character generation; Dielectric substrates; Dielectrics and electrical insulation; Energy exchange; Insulation life; Isolation technology; MOSFETs; Nuclear power generation; Silicon on insulator technology; Single event upset; Modeling; irradiation; silicon on insulator; single-event upset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
  • Conference_Location
    Novosibirsk
  • ISSN
    1815-3712
  • Print_ISBN
    978-5-7782-0893-3
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2008.4585839
  • Filename
    4585839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2373035