DocumentCode
2373054
Title
Evaporation of thin oxide layer from Si-(111) surface (simulation)
Author
Usenkov, Stanislav V. ; Yanovitskaya, Zoya Sh ; Schwartz, Natalia L.
Author_Institution
Novosibirsk State Tech. Univ., Novosibirsk
fYear
2008
fDate
1-5 July 2008
Firstpage
37
Lastpage
40
Abstract
Monte Carlo (MC) simulation of thin oxide evaporation from silicon surface was carried out. Including in MC model chemical reactions of creation and dissociation of silicon monoxide during annealing makes it possible to simulate evaporation of a thin oxide layers. It was shown, that defects in the oxide matrix provoke starting of the layer dissociation processes.
Keywords
Monte Carlo methods; annealing; crystal defects; dissociation; elemental semiconductors; evaporation; oxidation; silicon; surface chemistry; MC model chemical reactions; Monte Carlo simulation; Si; annealing; defects; dissociation; evaporation; silicon monoxide; silicon surface simulation; thin oxide layer; Chemicals; Image analysis; Lattices; Microelectronics; Monte Carlo methods; Physics; Silicon compounds; Simulated annealing; Stacking; Temperature; Monte Carlo; Silicon dioxide; evaporation; modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location
Novosibirsk
ISSN
1815-3712
Print_ISBN
978-5-7782-0893-3
Type
conf
DOI
10.1109/SIBEDM.2008.4585840
Filename
4585840
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