Device-technological modeling of bipolar transistor with base in the well

Author

Kozlov, Anton V. ; Tikhonov, Robert D.

Author_Institution

Moscow state Inst. of Electron. Eng., Tech. Univ., Moscow

fYear

2008

fDate

1-5 July 2008

Firstpage

69

Lastpage

73

Abstract

Device-technological modeling of bipolar magnetotransistor allows to reduce expenses for design of new updates. Modeling of bipolar magnetotransistor with base in a well has enabled to investigate distribution of charge carriers, currents of electrons and holes in structure of the device. The establishment of connection of electric characteristics with features of distribution of carriers has revealed the concentration- recombination mechanism of sensitivity. The knowledge of the mechanism of sensitivity results in optimization of structure and increase of relative current sensitivity up to 8 T^-1.

Keywords

bipolar transistors; current distribution; magnetic devices; semiconductor device models; bipolar magnetotransistor; bipolar transistor; charge carriers distribution; concentration-recombination mechanism; current sensitivity; device-technological modeling; Bipolar transistors; Charge carrier processes; Current measurement; Electrodes; Electron emission; Impurities; Integrated circuit measurements; Magnetic field measurement; Spontaneous emission; Voltage; Magnetotransistor; modeling; sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on

Conference_Location

Novosibirsk

ISSN

1815-3712

Print_ISBN

978-5-7782-0893-3

Type

conf

DOI

10.1109/SIBEDM.2008.4585870

Filename

4585870