Structural and electrical properties of modified CMOS device under radiation environment in designing of voltage control oscillator (VCO)

Author

Jain, C.P.

Author_Institution

Dept. of Electron., Banasthali Univ., Jaipur, India

fYear

2014

fDate

28-29 Nov. 2014

Firstpage

379

Lastpage

383

Abstract

This paper shows the structural CMOS with and without radiation and variation of electrical properties of device under various radiations doses and proposes a modified CMOS circuit which mitigates radiation effect by improving switch point in I-V characteristic. In order to redesign the circuit for radiation resistance; the above radiation hardened inverter circuit is used to design the Voltage Controlled Oscillator using Radiation Hardened By Design (RDBD) technique. The circuit exhibits only minimal degradation with total dose when irradiated.

Keywords

CMOS analogue integrated circuits; integrated circuit design; invertors; radiation hardening (electronics); voltage-controlled oscillators; I-V characteristic; RDBD technique; VCO; electrical properties; modified CMOS device; radiation effect mitigation; radiation environment; radiation hardened by design technique; radiation hardened inverter circuit; radiation resistance; radiations doses; structural properties; switch point; voltage control oscillator design; CMOS integrated circuits; Inverters; Radiation hardening (electronics); Transistors; Voltage control; Voltage-controlled oscillators; Radiation Hardened By Design (RHBD); Voltage Controlled Oscillators (VCO); single event transients; total ionizing dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Intelligence on Power, Energy and Controls with their impact on Humanity (CIPECH), 2014 Innovative Applications of

Conference_Location

Ghaziabad

Type

conf

DOI

10.1109/CIPECH.2014.7019063

Filename

7019063