DocumentCode
2375705
Title
Gate and emitter design for high frequency thyristors
fYear
1979
fDate
18-22 June 1979
Firstpage
75
Lastpage
79
Abstract
To minimize the switching loss of high frequency thyristors, three kinds of multifinger gates and emitter designs are studied. The device characteristics were evaluated. The power loss during high frequency operation was measured. The rate of rise of forward current was studied.
Keywords
Assembly; Cathodes; Fingers; Logic gates; Silicon; Testing; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1979 IEEE
Conference_Location
San Diego, CA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1979.7081012
Filename
7081012
Link To Document