• DocumentCode
    2375708
  • Title

    Circuit performance characterization of digital 45-nm CMOS technology for applications around 110 GHz

  • Author

    Aroca, R.A. ; Tomkins, A. ; Doi, Y. ; Yamamoto, T. ; Voinigescu, S.P.

  • Author_Institution
    Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON
  • fYear
    2008
  • fDate
    18-20 June 2008
  • Firstpage
    162
  • Lastpage
    163
  • Abstract
    The first 50-GHz to 110-GHz downconverter in 45-nm digital CMOS is presented along with the mm-wave characterization of AMOS varactors, inductors and transformers. The varactor Q is higher than 6, up to 94 GHz. The downconverter gain is 15 dB at 111GHz, and is employed as a broadband test vehicle to characterize the optimal noise figure current density (JOPT) of 45-nm MOSFETs in the 50 GHz to 110 GHz range.
  • Keywords
    CMOS digital integrated circuits; MOSFET; field effect MIMIC; inductors; transformers; varactors; AMOS varactors; MOSFET; digital CMOS technology; downconverter; frequency 111 GHz; frequency 50 GHz to 110 GHz; gain 15 dB; inductors; mm-wave characterization; size 45 nm; transformers; CMOS digital integrated circuits; CMOS technology; Circuit optimization; Gain; Inductors; Noise figure; Testing; Transformers; Varactors; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2008 IEEE Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1804-6
  • Electronic_ISBN
    978-1-4244-1805-3
  • Type

    conf

  • DOI
    10.1109/VLSIC.2008.4585991
  • Filename
    4585991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2375708