DocumentCode
2376109
Title
Development of a new flip-chip bonding process using multi-stacked μ-Au bumps
Author
Suwa, Motoo ; Takahashi, Hiroyuki ; Kamada, Chiyoshi ; Nishiuma, Masahiko
Author_Institution
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fYear
1994
fDate
1-4 May 1994
Firstpage
906
Lastpage
909
Abstract
A novel flip-chip bonding (FCB) process was developed for improving the packaging of high frequency ICs operating at more than 10 GHz. This process, which uses multi-stacked μ-Au bumps, a lower apparatus cost than that of the FCB process using PbSn bumps. Tests have confirmed that the new FCB process is sufficiently reliable and that ICs made with this process has satisfactory high-frequency characteristics in IC operation of up to 15 GHz
Keywords
digital integrated circuits; gold; integrated circuit packaging; microassembling; microwave integrated circuits; 15 GHz; Au; MIC; flip-chip bonding process; high frequency ICs; high-speed digital ICs; multi-stacked μ-Au bumps; packaging; reliability; Bonding; Costs; Frequency; Gold; Inductance; Integrated circuit packaging; Reflection; Reflectometry; Voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1994. Proceedings., 44th
Conference_Location
Washington, DC
Print_ISBN
0-7803-0914-6
Type
conf
DOI
10.1109/ECTC.1994.367521
Filename
367521
Link To Document