DocumentCode
2376938
Title
Physical and technological limitations and their optimization in submicron ULSI interconnect
Author
Oh, Soo-Young ; Chang, Keh-Jeng ; Moll, John L.
Author_Institution
Hewlett-Packard, Palo Alto, CA, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
346
Lastpage
349
Abstract
The trend of the performance degradation, noise and reliability issues and their potential solutions are analyzed for submicron ULSI interconnect lines. The analysis shows that a copper (Cu) line will improve electromigration, but not the interconnect delay and cross-talk noise significantly. The low temperature operation improves the interconnect delay and electromigration, but increases the cost of system packaging. The optimum approach a combination of additional layers of nonscaled metal lines in a higher level and the use of repeaters to maximize the performance, noise and reliability and to minimize the risk and cost
Keywords
VLSI; copper; crosstalk; delays; electromigration; integrated circuit technology; metallisation; noise; reliability; Cu line; crosstalk noise; electromigration; interconnect delay; low temperature operation; noise; nonscaled metal lines; optimization; packaging; performance degradation; reliability; repeaters; submicron ULSI interconnect; technological limitations; Copper; Costs; Crosstalk; Degradation; Delay; Electromigration; Packaging; Performance analysis; Temperature; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.153021
Filename
153021
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