• DocumentCode
    2376938
  • Title

    Physical and technological limitations and their optimization in submicron ULSI interconnect

  • Author

    Oh, Soo-Young ; Chang, Keh-Jeng ; Moll, John L.

  • Author_Institution
    Hewlett-Packard, Palo Alto, CA, USA
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    346
  • Lastpage
    349
  • Abstract
    The trend of the performance degradation, noise and reliability issues and their potential solutions are analyzed for submicron ULSI interconnect lines. The analysis shows that a copper (Cu) line will improve electromigration, but not the interconnect delay and cross-talk noise significantly. The low temperature operation improves the interconnect delay and electromigration, but increases the cost of system packaging. The optimum approach a combination of additional layers of nonscaled metal lines in a higher level and the use of repeaters to maximize the performance, noise and reliability and to minimize the risk and cost
  • Keywords
    VLSI; copper; crosstalk; delays; electromigration; integrated circuit technology; metallisation; noise; reliability; Cu line; crosstalk noise; electromigration; interconnect delay; low temperature operation; noise; nonscaled metal lines; optimization; packaging; performance degradation; reliability; repeaters; submicron ULSI interconnect; technological limitations; Copper; Costs; Crosstalk; Degradation; Delay; Electromigration; Packaging; Performance analysis; Temperature; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.153021
  • Filename
    153021