• DocumentCode
    2376978
  • Title

    Power Amplifier Design for E-band Wireless System Communications

  • Author

    Hadziabdic, Dzenan ; Krozer, Viktor ; Johansen, Tom K.

  • Author_Institution
    DTU-Elektro, Tech. Univ. of Denmark, Lyngby
  • fYear
    2008
  • fDate
    27-31 Oct. 2008
  • Firstpage
    1378
  • Lastpage
    1381
  • Abstract
    E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present a power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications as an alternative to HEMT based technologies in the millimeter-wave frequency range.
  • Keywords
    III-V semiconductors; bipolar MIMIC; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; radiocommunication; DHBT technology; E-band wireless system communications; InP; high-speed data transmission; microwave backhaul; millimeter-wave frequency range; power amplifier; power amplifier design; state-of-the-art power-added efficiency; DH-HEMTs; Data communication; Frequency; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Microwave communication; Power amplifiers; Power generation; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008. EuMC 2008. 38th European
  • Conference_Location
    Amsterdam
  • Print_ISBN
    978-2-87487-006-4
  • Type

    conf

  • DOI
    10.1109/EUMC.2008.4751721
  • Filename
    4751721