A Comparative Analysis of two Differential Colpitts VCOs in InGaP/GaAs HBT Technology

Author

Qian, Cheng ; Shrestha, Bhanu ; Na, Ho-San ; Kim, Nam-Young

Author_Institution

Kwangwoon Univ., Seoul

fYear

2007

fDate

15-16 Nov. 2007

Firstpage

141

Lastpage

144

Abstract

This paper presents two InGaP/GaAs HBT differential Colpitts VCOs designed with low phase noise for adaptive feedback interference cancellation systems (AF-ICS). The cross coupled structure achieves a phase noise of -130.3 dBc/Hz at 1 MHz offset from the carrier frequency of 1.566 GHz and the double cross coupled structure achieves -134.58 dBc/Hzat 1 MHz offset from the carrier frequency of 1.630 GHz. Two VCOs provide output power of -5.3 dBm and -3.91 dBm from 5 V supply, respectively. The LC tank and two pairs of on-chip BC diodes as varactors are used in Both VCOs.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; interference (signal); interference suppression; voltage-controlled oscillators; HBT; InGaP-GaAs; InGaP-GaAs - Interface; LC-tank; adaptive feedback interference cancellation systems; differential Colpitts VCO; frequency 1.566 GHz; frequency 1.630 GHz; heterodyne bipolar transistor; low phase noise; low-frequency noise; voltage 5 V; voltage controlled oscillator; Circuit noise; Circuit topology; Feedback; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Interference cancellation; Phase noise; Resistors; Voltage-controlled oscillators; InGaP/GaAs; LC-tank; colpitts; differential; heterodyne bipolar transistor (HBT); low-frequency noise; phase noise; voltage controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. KJMW 2007. Korea-Japan

Conference_Location

Okinawa

Print_ISBN

978-1-4244-1556-4

Type

conf

DOI

10.1109/KJMW.2007.4402260

Filename

4402260