DocumentCode
2378910
Title
Process Development toward Enhancement-Mode Strained-Si/SiGe Double Quantum Dot
Author
Lu, Tzu-Ming ; Bishop, Nathaniel C. ; Pluym, Tammy ; Dominguez, Jason ; Bower, John E. ; Cederberg, Jeffrey ; Kotula, Paul G. ; Tracy, Lisa A. ; Means, Joel ; Lilly, Michael P. ; Carroll, Malcolm S.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
2
Abstract
In this talk, we present our recent efforts in process development toward enhancement-mode strained Si/SiGe double quantum dots, utilizing either a 150mm Si foundry at wafer-level or a modern cleanroom setting at die-level. We focus on the following aspects: choice of gate insulator, device stability, and thermal budget.
Keywords
Ge-Si alloys; elemental semiconductors; semiconductor device manufacture; semiconductor quantum dots; silicon; SiGe-Si; device stability; die-level; enhancement-mode strained-Si/SiGe double quantum dot; gate insulator; modern cleanroom setting; process development; thermal budget; wafer-level; Laboratories; Logic gates; Quantum computing; Quantum dots; Silicon; Silicon germanium; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location
Berkeley, CA
Print_ISBN
978-1-4577-1864-9
Electronic_ISBN
978-1-4577-1863-2
Type
conf
DOI
10.1109/ISTDM.2012.6222413
Filename
6222413
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