• DocumentCode
    2379038
  • Title

    Integration of III-V on Si for High-Mobility CMOS

  • Author

    Waldron, Niamh ; Wang, Gang ; Nguyen, Ngoc Duy ; Orzali, Tommaso ; Merckling, Clement ; Brammertz, Guy ; Ong, Patrick ; Winderickx, Gillis ; Hellings, Geert ; Eneman, Geert ; Caymax, Matty ; Meuris, Marc ; Horiguchi, Naoto ; Thean, Aaron

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper we present results from an InGaAs/InP implant free quantum well device integrated fully in a Si CMOS processing line. The virtual InP substrates are generated using a Si template which is prepared by standard STI processing. The Si in the STI trenches is etched and a Ge seed layer grown.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; electron mobility; elemental semiconductors; etching; gallium arsenide; indium compounds; integration; ion implantation; quantum well devices; semiconductor growth; silicon; III-V semiconductors; InGaAs-InP; Si; etching; free quantum well device; high-mobility CMOS; implant; integration; seed layer grown; CMOS integrated circuits; Indium gallium arsenide; Indium phosphide; Logic gates; Silicon; Substrates; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222422
  • Filename
    6222422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379038