Epitaxial Growth and Anisotropic Strain Relaxation of Ge1-xSnx Layers on Ge(110) Substrates

Author

Asano, Takanori ; Shimura, Yosuke ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Zaima, Shigeaki

Author_Institution

Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

We have achieved the heteroepitaxial growth of a pseudomorphic Ge0.954Sn0.046 layer without Sn precipitation on a Ge(110) substrate. The strain in the Ge_1-xSn_x layer preferentially relaxed along [001] direction with annealing over 500°C due to the anisotropic layout of glide planes on Ge(110) surface. These results suggest that an uniaxially compressive strained Ge_1-xSn_x structure can be realized with the anisotropic strain relaxation.

Keywords

annealing; compressibility; compressive strength; germanium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; slip; Ge; Ge(110) substrates; Ge_1-xSn_x; [001] direction; anisotropic layout; anisotropic strain relaxation; annealing; glide planes; heteroepitaxial growth; molecular beam epitaxy method; pseudomorphic layer; semiconductor material; temperature 500 degC; uniaxially compressive strained structure; Annealing; Epitaxial growth; Lattices; Strain; Substrates; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222442

Filename

6222442