Uniaxially Strained Ge-Rich SiGe Nanowire Channel Technology for High-Performance CMOS

Author

Ikeda, Keiji ; Oda, Minoru ; Irisawa, Toshifumi ; Kamimuta, Yuuichi ; Moriyama, Yoshihiko ; Tezuka, Tsutomu

Author_Institution

MIRAI-Toshiba, Kawasaki, Japan

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

Hole-mobility and carrier-velocity characteristics of Ge-rich SGOI-nanowire were comprehensively investigated. The Ge-rich SGOI-nanowire channel devices were found to have higher hole-mobility and velocity than that of the unstrained-Ge and SOI devices. The ideal performance assessment revealed that a significant increase (over 2.6 times) in drive current is expected. These indicate that the Ge-rich uniaxially strained SGOI-nanowire channel device has potential to paves the way to future low-power consumption and high-performance CMOS technology.

Keywords

CMOS integrated circuits; Ge-Si alloys; hole mobility; low-power electronics; nanowires; SGOI-nanowire channel device; carrier-velocity characteristics; high-performance CMOS; hole-mobility characteristics; low-power consumption; nanowire channel technology; uniaxially strained Ge-Rich SiGe; CMOS integrated circuits; FinFETs; Logic gates; MOSFET circuits; Silicon; Silicon germanium; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222446

Filename

6222446