• DocumentCode
    2379495
  • Title

    Germanium Channel P-Mosfet with TiO2/Al2O3 Bilayer High-K Gate Stacks and Solutions for Metal/TiO2 Interface Stability

  • Author

    Zhang, Liangliang ; Gungi, Marika ; McIntyre, Paul C.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The TiO2/Al2O3 layers are fabricated by atomic layer deposition (ALD), which provides precise control of monolayer film thicknesses. The samples were fabricated using a similar method to that reported in. Low capacitance equivalence thickness (CET) and small frequency dispersion of the capacitance are achieved with optimized process parameters.
  • Keywords
    MOSFET; aluminium compounds; atomic layer deposition; elemental semiconductors; germanium; semiconductor device manufacture; titanium compounds; P-MOSFET; TiO2-Al2O3; atomic layer deposition; bilayer high-k gate stacks; capacitance equivalence thickness; frequency dispersion; germanium channel; interface stability; monolayer film thicknesses; Aluminum oxide; Capacitance-voltage characteristics; Germanium; Logic gates; MOSFETs; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222448
  • Filename
    6222448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379495